NANOELECTRONICS & DEVICES - 2019/0
Module code: EEEM022
Expected prior/parallel learning: Students should have an interest in materials and devices; it would be of benefit to have studied EEE3037 Nanoscience and Nanotechnology.
Module purpose: Nanoelectronics represent the ultimate in advanced electronic device design and operation. At the nanoscale the quantum nature of matter is evident in the operation of faster, energy efficient devices with greater functionality. New materials such as graphene and new molecular electronic materials offer unique electronic properties continually emerge in parallel to advances in device architecture and performance. This module will introduce some of the key concepts in low dimensional mesoscopic science and engineering and molecular electronics. It will build from fundamental considerations of bonding in materials, through metals, semiconductors and insulators and molecules to the latest in materials and nanodevices
Electrical and Electronic Engineering
CAREY David (Elec Elec En)
Number of Credits: 15
ECTS Credits: 7.5
Framework: FHEQ Level 7
JACs code: H610
Module cap (Maximum number of students): N/A
Overall student workload
Prerequisites / Co-requisites
Indicative content includes the following.
1. Electronic Materials: Bonding and structure of molecules and metals, semiconductor, insulators, graphene. Simple band structure important materials. Drude’s description of transport. Dispersion relations.
2. Statistics in electron systems: Fermi-Dirac and Maxwell-Boltzmann Statistics; degenerate and non-degenerate systems, Densities of states.
3. 2D Materials and Devices: Graphene and graphene nanoelectronics.
4. What limits current in a nanoscale device? Mesoscopic science, Landauer formulism, quantised conductance, ballistic and diffusive conduction, mean free path, and the transmission coefficient.
5. Quantum tunnelling devices: Double barrier structure and resonant tunnelling. Negative differential resistance based devices and figures of merit.
6. Molecular materials for thin film devices: common electronic molecules and their properties and thin films deposition techniques and morphology
7. Characterisation of organic materials and their electronic properties: surface and bulk characterisation techniques and chemical composition and structure analysis in relation to electronic properties
8. Electronic properties of molecular/polymer thin films: effects of morphology and charge transport mechanisms, experimental methods for measuring charge mobility and organic field–effect transistors
9. Bulk organic and polymer devices: charge injection, Fermi level alignment, and heterojunctions, Organic Light Emitting Diodes (OLEDs) and lasers, FETs, e-paper, OPV devices
10. Challenges for molecular electronics
|Assessment type||Unit of assessment||Weighting|
|Examination||EXAMINATION - 2 HRS||80|
Not applicable: students failing a unit of assessment resit the assessment in its original format.
The assessment strategy for this module is designed to provide students with the opportunity to demonstrate the learning outcomes.
Describe how the assessment has been designed to assess module learning outcomes
The 2 hour written examination will assess knowledge of fundamental material properties and their behaviour in electric fields; allow the student to demonstrate an ability to perform numerical calculations of key material and device parameters. The assignment will assess the student’s ability to research into modern electronic devices and their potential applications.
Provide further detail on the summative assessment. Ensure that exam and coursework lengths are listed. Indicate assessment deadlines.
Thus, the summative assessment for this module consists of the following:
• A 2-hour closed book written examination
• A written assignment covering aspects associated with modern nanoelectronic devices (800 words plus diagrams, figures and references) and calculation of advanced device parameters. The assignment is set in week 2 and is due in in week 9.
These deadlines are indicative. For confirmation of exact date and time, please check the Departmental assessment calendar issued to you.
Formative assessment and feedback
For the module, students will receive formative assessment/feedback in the following ways.
• During lectures, by question and answer sessions
• During tutorials/tutorial classes
• By means of unassessed tutorial problem sheets (with answers/model solutions) provided in the revision guide
• Via the marking of written reports
• Via assessed coursework
- This module aims to equip students with an understanding of the science and engineering considerations for the exploration of new and existing materials for advanced nanoelectronic devices. In addition it will show how it is possible to engineer the structure of future devices to achieve desired electrical performance characteristics.
|1||Explain the origin and common properties of electronic materials including molecules, and in bulk and reduced dimensions.||KC|
|2||Compare the factors that influence common electrical material properties.||KT|
|3||Relate the device architecture to the electrical current-voltage characteristics of the device.||CP|
|4||Calculate the key device performance parameters, such as carrier concentration, for different materials and device geometries.||KC|
C - Cognitive/analytical
K - Subject knowledge
T - Transferable skills
P - Professional/Practical skills
Methods of Teaching / Learning
The learning and teaching strategy is designed to achieve the following aims.
Describe what the module learning and teaching strategy is designed to achieve and how it relates to the programme learning and teaching strategy.
1. Through the introduction of the key concepts, representative examples and in-class calculations, the students will be able to relate the structure of materials to their electronic and magnetic properties.
2. Through the introduction, discussion and study of different device geometries, students will be able to examine and calculate the key performance parameters in a range of devices.
3. Through a series of in-class formative tests, students will be able to readily judge their own progress in identify any gaps in their knowledge.
Learning and teaching methods include the following.
• Lectures and class discussions, 27 hours (spread over 10 weeks)
• Formative feedback sessions 3 hours (spread over 10 weeks)
• Revision sessions 3 hours (week 11)
Indicated Lecture Hours (which may also include seminars, tutorials, workshops and other contact time) are approximate and may include in-class tests where one or more of these are an assessment on the module. In-class tests are scheduled/organised separately to taught content and will be published on to student personal timetables, where they apply to taken modules, as soon as they are finalised by central administration. This will usually be after the initial publication of the teaching timetable for the relevant semester.
Upon accessing the reading list, please search for the module using the module code: EEEM022
Programmes this module appears in
|RF and Microwave Engineering MSc||2||Optional||A weighted aggregate mark of 50% is required to pass the module|
|Nanotechnology and Renewable Energy MSc||2||Compulsory||A weighted aggregate mark of 50% is required to pass the module|
|Electrical and Electronic Engineering MEng||2||Optional||A weighted aggregate mark of 50% is required to pass the module|
|Electronic Engineering with Nanotechnology MEng||2||Compulsory||A weighted aggregate mark of 50% is required to pass the module|
|Electronic Engineering MEng||2||Optional||A weighted aggregate mark of 50% is required to pass the module|
|Electronic Engineering MSc||2||Optional||A weighted aggregate mark of 50% is required to pass the module|
|Electronic Engineering (EuroMasters) MSc||2||Optional||A weighted aggregate mark of 50% is required to pass the module|
Please note that the information detailed within this record is accurate at the time of publishing and may be subject to change. This record contains information for the most up to date version of the programme / module for the 2019/0 academic year.