SEMICONDUCTOR DEVICES AND OPTOELECTRONICS - 2022/3
Module code: EEE3041
Module Overview
Expected prior learning: Module EEE2042 – Electronic and Photonic Devices, or equivalent learning, is advisory but not required.
Module purpose: Semiconductor devices and optoelectronics play a major technology enabling amongst other things the internet. The course is given via a series of lectures and aims to give a background to the interaction of light with key photonic materials and devices.
Module provider
Computer Science and Electronic Eng
Module Leader
CAREY David (CS & EE)
Number of Credits: 15
ECTS Credits: 7.5
Framework: FHEQ Level 6
Module cap (Maximum number of students): N/A
Overall student workload
Independent Learning Hours: 107
Lecture Hours: 22
Tutorial Hours: 11
Guided Learning: 10
Module Availability
Semester 2
Prerequisites / Co-requisites
None.
Module content
Indicative content includes the following.
Part A: Optical devices
[1-4] Fabry-Pérot resonator: resonance frequencies and optical modes, resonator losses and photon decay, spectral line shapes and mode profiles, Airy distributions, linewidths and finesses
[5] Laser resonators: light propagation and Gaussian beams, resonator types, ABCD matrix formalism, complex beam parameter, stability ranges and beam-spot sizes
[6] Spontaneous and stimulated emission: luminescence, blackbody radiation and Planck’s law, absorption, spontaneous and stimulated emission, light-emitting diodes and lasers
[7-8] Introduction to lasers: principle of lasing, round-trip equation, inversion, laser threshold, gain saturation, photon-rate equation, 3- and 4-level lasers, slope efficiency, pump and output power
[9-13] Lasers: spectral and spatial coherence, single- and multi-mode lasers, laser linewidth, Q-factor, coherence time and length, brightness, M2 factor, side- and end-pumping, thermal lensing, solid-state lasers, relaxation oscillations, Q-switched and mode-locked lasers
[14-16] Integrated Optics: arrayed-waveguide gratings, Bragg gratings, waveguide resonators, waveguide and fiber lasers, telecommunication, optical sensors
Part B Semiconductor Devices
[1-3] Semiconductor materials and physics, doping and diffusion, Fick's Laws of diffusion, sheet resistance
[4-6] Semiconductor devices, band diagrams, short channel effects, transistor scaling in modern energy efficient devices
[7-8] Silicon oxidation, dry and wet oxidation, Deal-Grove description of silicon oxidation and calculating oxidation times
[9-14] Materials processing, photolithography and ion implantation
[15] Epitaxial growth of modern semiconductors materials and devices, MBE, MOCVD, Strain engineering
[16] Electron scattering, Matthiessen's law and High Electron Mobility transistors (HEMTs)
[17] Revision
Assessment pattern
Assessment type | Unit of assessment | Weighting |
---|---|---|
Examination Online | 4 hour open book examination | 100 |
Alternative Assessment
Not applicable: students failing a unit of assessment resit the assessment in its original format.
Assessment Strategy
The assessment strategy for this module is designed to provide students with the opportunity to demonstrate the following.
· The examination measures their level of understanding of the lectured material and their ability to apply it successfully to problems.
The summative assessment for this module consists of a written 4 hour open book examination.
Formative assessment and feedback
For the module, students will receive formative assessment/feedback in the following ways:
· Students are provided with exercise sheets and model solutions via the module's SurreyLearn site.
· Timetabled lecture sessions are devoted to attempting these in a tutorial setting.
· Dedicated question-and-answer sessions occur in other lectures.
Module aims
- This module aims to introduce student to modern energy efficient electronic and photonic devices concentrating on the fundamental science of operation, device structure and characteristics.
Learning outcomes
Attributes Developed | ||
001 | Explain how the structural and electronic properties of materials influence the electrical characteristics of modern semiconductor devices. | KC |
002 | Explain how materials growth and processing can be employed to adjust the properties of materials and characteristics of modern semiconductor devices. | KC |
003 | Relate device architecture to device operation, characteristics and parameters | KC |
004 | Explain how optical phenomena, such as refraction, interference and diffraction, enable and determine the performance of photonic devices. | KC |
005 | Explain the fundamental characteristics of resonators and lasers. | KC |
006 |
Attributes Developed
C - Cognitive/analytical
K - Subject knowledge
T - Transferable skills
P - Professional/Practical skills
Methods of Teaching / Learning
The learning and teaching strategy is designed to enable students to achieve a working knowledge of state-of-the-art optoelectronic devices and of optical systems for application in industry or research.
Learning and teaching methods include the following.
- Lectures and revision classes over 11 weeks of semester.
Indicated Lecture Hours (which may also include seminars, tutorials, workshops and other contact time) are approximate and may include in-class tests where one or more of these are an assessment on the module. In-class tests are scheduled/organised separately to taught content and will be published on to student personal timetables, where they apply to taken modules, as soon as they are finalised by central administration. This will usually be after the initial publication of the teaching timetable for the relevant semester.
Reading list
https://readinglists.surrey.ac.uk
Upon accessing the reading list, please search for the module using the module code: EEE3041
Programmes this module appears in
Programme | Semester | Classification | Qualifying conditions |
---|---|---|---|
Electronic Engineering BEng (Hons) | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Electronic Engineering with Nanotechnology BEng (Hons) | 2 | Compulsory | A weighted aggregate mark of 40% is required to pass the module |
Electronic Engineering with Nanotechnology MEng | 2 | Compulsory | A weighted aggregate mark of 40% is required to pass the module |
RF and Microwave Engineering MSc | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Electronic Engineering MEng | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Electronic Engineering with Professional Postgraduate Year MSc | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Electronic Engineering MSc | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Nanotechnology and Renewable Energy MSc | 2 | Optional | A weighted aggregate mark of 40% is required to pass the module |
Please note that the information detailed within this record is accurate at the time of publishing and may be subject to change. This record contains information for the most up to date version of the programme / module for the 2022/3 academic year.